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How far G.SKILL Ripjaws X Series (F3-14900CL8D-8GBXM) go...?


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I wonder, how fast these DDR3 rams can go - G.SKILL Ripjaws X Series F3-14900CL8D-8GBXM:

 

G_SKILL_Ripjaws_X_Series_F3_14900_CL8_D_8_GBXM.jpg

 

And what chips they use - so if there is a chance for getting them run faster with more voltage - and what is the safe (or reasonably safe?) voltage limit for them.

 

That, of course, apply only when the chips used react well to more voltage. So, since the G.Skill logo claims "Go Beyond Limits", then I put these poor rams into Asus Z97-Pro (WiFi ac) board. Upon activating the XMP profile by switch on the board, the rams run at 8-9-9-24 2T @ 1866MHz.

 

The 2T can be changed to 1T and at that point, it gives with not overclocked i7 4790K, 21 739MB/sec in Memtest 4.20. The voltage is default 1.50V. When tried to set the DDR3-2000MHz memory clock settings, the board failed to post. 1866 seems to be the maximum at such settings (rest is on auto ATM). Precise settings are bellow (most "auto" values report what they are in the bios, what is marked with "???" is not shown up - does not show it's current settig in the bios).

 

The question is - of course - what best settings to use for these rams (there seems to be plenty of settings, including skews) and what one can expect to get from them on tight timings. Or if relaxing the timings help to get higher and that produce faster result...?

I checked the DDR3 ram chips list there:

http://ramlist.i4memory.com/ddr3/

...yet the closest I found was: PC3-14900 Ripjaws X

F3-14900CL9D-8GBXL (2x4GB) - 9-10-9-28 @ 1.5V - Hynix H5TQ2G83CFR-H9C

 

Close, but no hit. So that is not exactly helpfull. And since the rams run cold (several memtest hours) at 1.50V, then I believe they might like more voltage :) So the question is only how much, or what settings will be optimal to use to get them higher. IIRC the framerate in games stop increasing at about 2100MHz, so reaching the 2000 would be cool.

 

Is this possible?

 

 

The Asus Z97-Pro (WiFi ac) mainboard offer these settings for memory:

 

Primary Timings

DRAM CAS# Latency [Auto] [1] – [31] - 8

DRAM RAS# to CAS# Delay [1] – [31] - 9

DRAM RAS# PRE Time [Auto] [1] – [31] - 9

DRAM RAS# ACT Time [Auto] [1] – [63] - 24

DRAM Command Rate [Auto] [1] – [2] - 1

 

Secondary Timings

DRAM RAS# to RAS# Delay [Auto] [1] – [15] - 6

DRAM REF Cycle Time [Auto] [1] – [511] - 243

DRAM Refresh Interval [Auto] [1] – [65535] - 7283

DRAM WRITE Recovery Time [Auto] [1] – [16] - ???

DRAM READ to PRE Time [Auto] [1] – [15] - 8

DRAM FOUR ACT WIN Time [Auto] [1] – [255] - 29

DRAM WRITE to READ Delay [Auto] [1] – [15] - ???

DRAM CKE Minimum Pulse Width [Auto] [1] – [15] - 5

DRAM CAS# Write Latency [Auto] [1] – [31] - 8

 

RTL IOL control

DRAM RTL Initial Value [Auto] [1] - [63] - Auto

DRAM RTL (CHA_R0D0) [Auto] [1] - [63] - 0

DRAM RTL (CHA_R0D1) [Auto] [1] - [63] - 37

DRAM RTL (CHA_R1D0) [Auto] [1] - [63] - 0

DRAM RTL (CHA_R1D1) [Auto] [1] - [63] - 0

DRAM RTL (CHB_R0D0) [Auto] [1] - [63] - 0

DRAM RTL (CHB_R0D1) [Auto] [1] - [63] - 37

DRAM RTL (CHB_R1D0) [Auto] [1] - [63] - 0

DRAM RTL (CHB_R1D1) [Auto] [1] - [63] - 0

DRAM IO-L (CHA_R0D0) [Auto] [1] - [15] - 0

DRAM IO-L (CHA_R0D1) [Auto] [1] - [15] - 4

DRAM IO-L (CHA_R1D0) [Auto] [1] - [15] - 0

DRAM IO-L (CHA_R1D1) [Auto] [1] - [15] - 0

DRAM IO-L (CHB_R0D0) [Auto] [1] - [15] - 0

DRAM IO-L (CHB_R0D1) [Auto] [1] - [15] - 4

DRAM IO-L (CHB_R1D0) [Auto] [1] - [15] - 0

DRAM IO-L (CHB_R1D1) [Auto] [1] - [15] - 0

 

Third Timings

tRDRD [Auto] [1] - [7] - 4

tRDRD_dr [Auto] [1] - [15] - 6

tRDRD_dd [Auto] [1] - [15] - 6

tWRRD [Auto] [1] - [63] - 22

tWRRD_dr [Auto] [1] - [15] - 7

tWRRD_dd [Auto] [1] - [15] - 7

tWRWR [Auto] [1] - [7] - 4

tWRWR_dr [Auto] [1] - [15] - 7

tWRWR_dd [Auto] [1] - [15] - 7

Dec_WRD [Auto] [0] [1] - ???

tRDWR [Auto] [1] - [31] - 9

tRDWR_dr [Auto] [1] - [31] - 9

tRDWR_dd [Auto] [1] - [31] - 9

 

Skew Control

Transmitter Rising Slope [Auto] [0] – [31] - Auto

Transmitter Falling Slope [Auto] [0] – [31] - Auto

Transmitter Control Time [Auto] [0] – [31] - Auto

Receiver Rising Slope [Auto] [0] – [31] - Auto

Receiver Falling Slope [Auto] [0] – [31] - Auto

Receiver Control Time [Auto] [0] – [31] - Auto

 

MRC Fast Boot [Auto] [Enabled] [Disabled] - Enabled

DRAM CLK Period [Auto] [1] – [14] - Auto

Channel A/B DIMM Control [Enable Both DIMMS] [Disable DIMM0] [Disable DIMM1] [Disable Both DIMMS] - Enable Both DIMMS

Scrambler Setting [Optimized (ASUS] [Default (MRC)] - Optimized (ASUS)

MCH Full Check [Auto] [Enabled] [Disabled] - Auto

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Yes, I've never seen these use anything other than Samsung, but it doesn't mean that such kits don't exist.

If the kit is dual-sided (which it is likely to be) then the best timings to use it with are 9-11-11 to 9-12-12 through the range of 1200-1400MHz with voltage of 1.65-2.20V, all depending on quality of a particular sample.

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Don´t want to spoil the fun, I had similar kit that struggled to get 2400 10-11-11 stable at big volts^^ - as usual, quality varies on series and ics used for these often were rejects not good enough for higher bins - so try what is in it but don´t expect too much, if they do good see it as positive surprise

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GtiJason - I confirm that they are double sided. The s/n numbers are:

154725004434030

154725004434029

 

So if I decode it properly according to this: http://www.xtremesystems.org/forums/showthread.php?283666-Figuring-out-G-Skill-s-SNs then:

 

1547 25004434030

47 week of 2015

 

1547 2500 4434030

Samsung chips

 

15472500 4 434030

4xxx = DDR3-1866 8-9-9-24 ...???

 

So that means 2500, not 1500 ... but still it should meant (according to Don Dan post) Samsung chips. No idea what they are and how they will react on voltage?

 

should have no problem breaking that 2100mhz mark

 

Ehm, I mean for reasonable 24/7 usage, not for suicide run ;)

 

 

Sam OCX -

the best timings to use it with are 9-11-11 to 9-12-12 through the range of 1200-1400MHz with voltage of 1.65-2.20V

 

The XMP Profile 1 gives 8-9-9-24 2T, can be changed to 1T. Increasing just the clock to DDR3-2000 result in no-post. Bumping voltage to 1.65V (from 1.50) and raising the bar to DDR3-2000 result in Memtest showing tons of errors. (cannot instal Win yet, M.2 SSD is _NOT_ visible no matter what I do...).

So looks like that with tight timings we are not going anywhere with overclocking... or anyone have an idea what to change in the ram settings posted above...?

 

What was the most worrysome about this was, that the memory speed remain at 2000 exactly same 21739 MB/s as it was on 1866. So there is no point overclocking, when the speed remain the very same!

 

 

GtiJason -

Should scale past 2v on air, speeds such as 2400c8-11-11-21-1T tRFC 108-128 tCWL 6, Should be relatively easy to accomplish

 

2V? That is a bit too much, eh? :P

 

 

websmile -

Don´t want to spoil the fun, I had similar kit that struggled to get 2400 10-11-11 stable at big volts^^ - as usual, quality varies on series and ics used for these often were rejects not good enough for higher bins

 

Well, it they are barelly made to the 1866 XMP profile, then I'm affraid that "this it is"... Because even plenty more voltage (or I need to increase the termination voltage too, or any other setting(s)...? There are overhelmingly many of them...) did not give me the 134 more MHz... :(

 

 

phobosq -

Little OT - what is max mem voltage on Asus Z97-Pro?

 

That is not OT IMHO at all. The Asus Z97-Pro have a range of voltage for DDR3 rams between 1.20 to 1.92V by a very little steps. Bios 2303 (not lister on the site at all) and I was ATM unable to upgrade the bios at all, because DOS booting flash drive did not work AND every of these bios files that are more recent (2401, 2501, 2601, 2702) are REJECTED by the bios as "wrong file" ...

 

The question is only - does these rams react well on voltage settings... or do they not?

 

And another question is - why at DDR3-2000 settings (despite the errors) Memtest did not show more bandwitch? Not a bit more?

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Even with higher bin Samsung kits such as 2133c9 @ 1.5v or even 2400c9-11-11 1.65v, all kits I've tested starting late 2014 through 2015 the scaling and performance has been pretty awful. 2v too high, naw I have been running a 2400c9 TridentX kit at 2.0v on my daily rig for 5 plus months at 2800-9-12-12-18 . No degradation as far as I can tell :^)

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Holy book of DDR3 IC :

http://www.xtremesystems.org/forums/showthread.php?285767-DDR3-IC-thread

 

If double-sided, certainly 2Gb D-Rev, a bit lucky.

G.Skill 1600c7, 1866c8 and 2133c9 are usually 4Gb B-Rev single-sided (for 4 Go modules), i have 2 kits like that, not really viable beyond the XMP.

But even with D-Rev, it will not perform as good as TridentX 2400/2600c8/9.

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