Just a quick heads up for everyone that is waiting for the next Hynix IC to come out. Been playing around with the new -EFR IC and they are definitely not for overclockers. Default spec is something like DDR3-1600C8-8-8 and they can't be pushed higher than DDR3-2133. In fact, DDR3-2133 isn't even stable with C11 and 1.75V ...

 

It's probably going to end up in low-end low-voltage SKUs, but no new magic ICs for overclocking.

 

 

Just FYI.

Thanks for sharing!

 

Why did you hide the speed bin though?

Can you share it? And maybe tell us what kit you found them on? It looks like Brainpower PCB, so my best guess is G.Skill.

Official spec is DDR3-1600 C11-11-11-28 1.35V, but the spec for retail kits will be quite different.

 

Don't ask me about vendors or retail specs, that's not something I can't share. Don't want to get any vendor in trouble ... don't want partners to complain about me testing chips from other vendors (). Just trying to share some info on memory IC ...

That's what I meant, it's the PBC bin. However it must be the 1.5V spec, the 1.35V spec would be H5TC2G83EFR.

 

Okay okay, no more questions!

massman fail ?

Maybe they scale only with cold?

Lol. No scaling with voltage or timings but cold will magically change everything

When has hynix been for overclocking?

do you know approximately when did the production of these ICs start?

Don't ask me about vendors or retail specs, that's not something I can't share.

 

Double negation? :ws:

So where are the infos we want? :celebration:

You don't want any info because "see topic title".

Hey massman,any news regarding samsungs 2x nm?Considering they improved quite a lot from 40 nm to 30 nm,i expect 20 nm should be teh shit

Forgot to reply - no, don't have any news on the Samsung 2x nm chips.

 

Too busy listening to the rumours of AMD releasing new cards in January. Oops ... .

Damn,maybe samsung 2x memory-kits will show up together with haswell? They are already listed on samsung website,but not a word about retail...